The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2012
Filed:
Jan. 30, 2009
Applicants:
Satoru Shimada, Hashima, JP;
Yasuhiro Takeda, Ogaki, JP;
Seiji Otake, Kumagaya, JP;
Inventors:
Assignees:
Sanyo Electric Co., Ltd., Osaka, JP;
Sanyo Semiconductor Co., Ltd., Gunma, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8249 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of fabricating a semiconductor device includes a first step of forming a defect suppression film suppressing increase in a defect due to implantation of an impurity on a semiconductor substrate, a second step of forming an active region on a surface of the semiconductor substrate by implanting the impurity through the defect suppression film, a third step of removing the defect suppression film and a fourth step of forming an interface state suppression film suppressing increase in an interface state density of the active region on the active region.