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For the Inventor, By the Inventor

Cary, NC, United States of America

Sarah Kay Haney

This inventor holds 12 USPTO granted patents and 2 published patent applications and 1 EPO patent. Top assignees: Intel Corporation, Cree Gmbh. Active years: 2010-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sarah Kay Haney. Retrieved from https://idiyas.com/inventor/sarah-kay-haney

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 12 

% Patents Active = 66.7

 

Average Co-Inventor Count = 3.3

ph-index = 4

Forward Citations = 40(Granted Patents)


Location History:

  • Apex, NC (US) (2010)
  • Cary, NC (US) (2013 - 2019)

Company Filing History:

goldMedal8 out of 56,322 
 
Intel Corporation
 patents
silverMedal4 out of 2,307 
 
Cree Gmbh
 patents

Years Active: 2010-2019

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12 patents (USPTO):Explore Patents
1. 10179729 - Hermetic encapsulation for microelectromechanical systems (MEMS) devices (2019-01-15),
2. 10068834 - Floating bond pad for power semiconductor devices (2018-09-04),
3. 10033093 - mmWave antennas and transmission lines on standard substrate materials (2018-07-24),
4. 9791470 - Magnet placement for integrated sensor packages (2017-10-17),
5. 9505610 - Device, system and method for providing MEMS structures of a semiconductor package (2016-11-29),
6. 9501068 - Integration of pressure sensors into integrated circuit fabrication and packaging (2016-11-22),
7. 9345184 - Magnetic field shielding for packaging build-up architectures (2016-05-17),
8. 9312256 - Bidirectional silicon carbide transient voltage supression devices (2016-04-12),
9. 9260294 - Integration of pressure or inertial sensors into integrated circuit fabrication and packaging (2016-02-16),
10. 9242854 - Hermetic encapsulation for microelectromechanical systems (MEMS) devices (2016-01-26),
11. 8445917 - Bidirectional silicon carbide transient voltage suppression devices (2013-05-21),
12. 7795691 - Semiconductor transistor with P type re-grown channel layer (2010-09-14),

Title: The Innovative Journey of Sarah Kay Haney

Introduction

Sarah Kay Haney is a prominent inventor based in Cary, NC (US). She has made significant contributions to the field of microelectromechanical systems (MEMS) and power semiconductor devices. With a total of 12 patents to her name, her work has had a profound impact on technology and engineering.

Latest Patents

One of her latest patents is titled "Hermetic encapsulation for microelectromechanical systems (MEMS) devices." This invention describes a process for creating a hermetic encapsulation structure for MEMS devices. The design includes a MEMS substrate stack that features a magnet, laminate organic dielectric films, and a hermetic coating. This innovative approach allows for the formation of a hermetically encapsulated cavity surrounding the MEMS device layer, enhancing the reliability and performance of MEMS devices.

Another notable patent is "Floating bond pad for power semiconductor devices." This invention focuses on a semiconductor device that includes a floating bond pad, which is particularly beneficial for power semiconductor devices. The design allows for a reduction in the size of the power semiconductor device while maintaining its rated current, showcasing her ability to innovate in the semiconductor field.

Career Highlights

Throughout her career, Sarah has worked with leading companies such as Intel Corporation and Cree GmbH. Her experience in these organizations has allowed her to develop cutting-edge technologies and contribute to advancements in the industry.

Collaborations

Sarah has collaborated with talented individuals, including Sasha N. Oster and Feras Eid. These partnerships have fostered innovation and creativity in her projects.

Conclusion

Sarah Kay Haney's contributions to the fields of MEMS and power semiconductor devices highlight her innovative spirit and dedication to advancing technology. Her impressive portfolio of patents reflects her expertise and commitment to excellence in engineering.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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