The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Apr. 11, 2013
Applicant:
Cree, Inc., Durham, NC (US);
Inventors:
Sarah Kay Haney, Cary, NC (US);
Sei-Hyung Ryu, Cary, NC (US);
Assignee:
Cree, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 27/02 (2006.01); H01L 27/08 (2006.01); H01L 29/16 (2006.01); H01L 29/866 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 27/0814 (2013.01); H01L 29/1608 (2013.01); H01L 29/866 (2013.01);
Abstract
An electronic device includes a silicon carbide layer having a first conductivity type and having a first surface and a second surface opposite the first surface, and first and second silicon carbide Zener diodes on the silicon carbide layer. Each of the first and second silicon carbide Zener diodes may include a first heavily doped silicon carbide region having a second conductivity type opposite the first conductivity type on the silicon carbide layer, and an ohmic contact on the first heavily doped silicon carbide region.