The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 2018

Filed:

Mar. 04, 2013
Applicant:

Cree, Inc., Durham, NC (US);

Inventors:

Sarah Kay Haney, Cary, NC (US);

Brett Hull, Raleigh, NC (US);

Daniel Namishia, Wake Forest, NC (US);

Assignee:

Cree, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/50 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 23/00 (2006.01); H01L 29/74 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 23/48 (2013.01); H01L 21/50 (2013.01); H01L 24/06 (2013.01); H01L 24/05 (2013.01); H01L 24/29 (2013.01); H01L 24/48 (2013.01); H01L 24/83 (2013.01); H01L 29/41741 (2013.01); H01L 29/42308 (2013.01); H01L 29/42372 (2013.01); H01L 29/74 (2013.01); H01L 29/7802 (2013.01); H01L 2224/02166 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/056 (2013.01); H01L 2224/05553 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/0612 (2013.01); H01L 2224/06102 (2013.01); H01L 2224/29101 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48463 (2013.01); H01L 2224/49107 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/83801 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/10161 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/1301 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/38 (2013.01);
Abstract

Embodiments of a semiconductor device including a floating bond pad are disclosed. In one preferred embodiment, the semiconductor device is a power semiconductor device. In one embodiment, the semiconductor device includes a substrate that includes an active area and a control contact area, a first bond pad on the active area, a floating control bond pad on the control contact area and laterally extending over a portion of the first bond pad, and a dielectric between the portion of the first bond pad and the floating control bond pad. The floating control bond pad enables the active area to extend below the floating control bond pad, which in turn decreases a size of the power semiconductor device for a particular rated current or, conversely, increases a size of the active area and thus a rated current for a particular semiconductor die size.


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