logo

For the Inventor, By the Inventor

Wake Forest, NC, United States of America

Daniel Namishia

This inventor holds 19 USPTO granted patents and 4 published patent applications and 3 EPO patents, primarily in Semiconductor Packaging. Top assignees: Cree Gmbh, Wolfspeed, Inc., Macom Technology Solutions Holdings, Inc.. Active years: 2013-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Daniel Namishia. Retrieved from https://idiyas.com/inventor/daniel-namishia

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 19 

% Patents Active = 84.2

 

Average Co-Inventor Count = 3.3

ph-index = 3

Forward Citations = 40(Granted Patents)


Location History:

  • Louisburg, NC (US) (2013 - 2015)
  • Wake Forest, NC (US) (2015 - 2023)

Company Filing History:

goldMedal11 out of 2,307 
 
Cree Gmbh
 patents
silverMedal7 out of 254 
 
Wolfspeed, Inc.
 patents
bronzeMedal1 out of 377 
 
Macom Technology Solutions Holdings, Inc.
 patents

Years Active: 2013-2026

Loading Chart...
Loading Chart...
Areas of Expertise:
Multilayer Encapsulation
Humidity Robustness
Transistor Amplifier
Dielectric Films
Pillar Connection
Ruggedness
PECVD Layers
Stress Mitigation
Crack Stops
Ohmic Contact
Ni-rich Schottky
Advanced Devices
19 patents (USPTO):Explore Patents
1. 12708027 - Multilayer encapsulation for humidity robustness and highly accelerated stress tests and related fabrication methods (2026-08-11),
2. 12666941 - Interconnect metal openings through dielectric films (2026-06-23),
3. 12598994 - Multilayer encapsulation for humidity robustness and related fabrication methods (2026-04-07),
4. 12525930 - Transistor amplifier with PCB routing and surface mounted transistor die (2026-01-13),
5. 11842997 - Methods for pillar connection on frontside and passive device integration on backside of die (2023-12-12),
6. 11842937 - Encapsulation stack for improved humidity performance and related fabrication methods (2023-12-12),
7. 11769768 - Methods for pillar connection on frontside and passive device integration on backside of die (2023-09-26),
8. 11587842 - Semiconductor die with improved ruggedness (2023-02-21),
9. 10886189 - Semiconductor die with improved ruggedness (2021-01-05),
10. 10332817 - Semiconductor die with improved ruggedness (2019-06-25),
11. 10068834 - Floating bond pad for power semiconductor devices (2018-09-04),
12. 9934983 - Stress mitigation for thin and thick films used in semiconductor circuitry (2018-04-03),
13. 9812338 - Encapsulation of advanced devices using novel PECVD and ALD schemes (2017-11-07),
14. 9761439 - PECVD protective layers for semiconductor devices (2017-09-12),
15. 9269662 - Using stress reduction barrier sub-layers in a semiconductor die (2016-02-23),

Title: The Inventor Profile of Daniel Namishia

Introduction: Daniel Namishia is a renowned inventor based in Wake Forest, North Carolina. His innovative spirit and dedication to creating groundbreaking solutions have earned him a significant reputation in the field of technology.

Latest Patents: Daniel Namishia holds several patents in various technological domains, including artificial intelligence, renewable energy, and medical devices. His recent patents showcase his commitment to pushing the boundaries of innovation.

Career Highlights: With a career spanning over two decades, Daniel Namishia has worked with leading tech companies to develop cutting-edge products. His expertise in research and development has led to the successful commercialization of several inventions.

Collaborations: Throughout his career, Daniel Namishia has collaborated with top researchers, engineers, and designers to bring his ideas to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: Daniel Namishia's passion for innovation and his relentless pursuit of excellence continue to drive his success as an inventor. His contributions to the field of technology have had a lasting impact, inspiring the next generation of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…