The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Oct. 17, 2012
Applicant:
Cree, Inc., Durham, NC (US);
Inventors:
Zoltan Ring, Chapel Hill, NC (US);
Helmut Hagleitner, Zebulon, NC (US);
Daniel Namishia, Wake Forest, NC (US);
Fabian Radulescu, Chapel Hill, NC (US);
Assignee:
Cree, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 49/02 (2006.01); H01L 23/532 (2006.01); C23C 28/02 (2006.01); C23C 28/00 (2006.01); H01L 21/02 (2006.01); H01L 23/538 (2006.01); H01L 33/38 (2010.01); H01L 23/495 (2006.01); H01L 33/36 (2010.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5223 (2013.01); C23C 28/023 (2013.01); C23C 28/42 (2013.01); H01L 23/53252 (2013.01); H01L 28/65 (2013.01); H01L 28/75 (2013.01); H01L 21/022 (2013.01); H01L 23/3192 (2013.01); H01L 23/49534 (2013.01); H01L 23/538 (2013.01); H01L 33/36 (2013.01); H01L 33/385 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor die, which includes a substrate, a group of primary conduction sub-layers, and a group of separation sub-layers, is disclosed. The group of primary conduction sub-layers is over the substrate. Each adjacent pair of the group of primary conduction sub-layers is separated by at least one of the group of separation sub-layers. As a result, the group of separation sub-layers mitigates grain growth in the group of primary conduction sub-layers.