The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2016

Filed:

Sep. 27, 2013
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Sasha Oster, Chandler, AZ (US);

Sarah Haney, Cary, NC (US);

Weng Hong Teh, Phoenix, AZ (US);

Feras Eid, Chandler, AZ (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05K 9/00 (2006.01); H01L 23/552 (2006.01); H01L 23/00 (2006.01); B32B 37/24 (2006.01); B32B 38/10 (2006.01); B81B 7/00 (2006.01); B81B 7/02 (2006.01); G06F 1/18 (2006.01); H05K 1/11 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H05K 9/0052 (2013.01); B32B 37/24 (2013.01); B32B 38/10 (2013.01); B81B 7/0032 (2013.01); B81B 7/02 (2013.01); G06F 1/182 (2013.01); H01L 23/552 (2013.01); H01L 24/19 (2013.01); H01L 24/96 (2013.01); H05K 1/115 (2013.01); B32B 2037/243 (2013.01); B32B 2457/00 (2013.01); H01L 21/568 (2013.01); H01L 2224/04105 (2013.01); H01L 2924/14 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/1461 (2013.01); Y10T 156/10 (2015.01);
Abstract

Magnetic field shielding material with high relative permeability incorporated into a build-up package, for example to restrict a field of a magnet integrated with the build-up to a target device configured to operate in the field. In embodiments, a first device is physically coupled to the build-up. In embodiments, a magnetic field shielding material is disposed in contact with the build-up and in proximity to the first device to restrict a magnetic field either to a region occupied by the first device or to a region exclusive of the first device. A field shielding material may be disposed within build-up near a permanent magnet also within the build-up to reduce exposure of another device, such as an IC, to the magnetic field without reducing MEMS device exposure.


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