IDiyas

For the Inventor, By the Inventor

Austin, TX, United States of America

Sangwoo Lim

USPTO Granted Patents = 8

Average Co-Inventor Count = 2.8

ph-index = 3

Forward Citations = 24(Granted Patents)


Location History:

  • Austin, TX (US) (2006 - 2010)
  • Seoul, KR (2009 - 2022)

Company Filing History:

goldMedal7 out of 5,491 
 
Freescale Semiconductor,inc.
 patents
silverMedal1 out of 1,333 
 
Yonsei University
 patents

Years Active: 2006-2022

Loading Chart...
8 patents (USPTO):
1. 11521859 - Non-phosphoric acid-based silicon nitride film etching composition and etching method using the same (2022-12-06),
2. 7781831 - Semiconductor device having nitridated oxide layer and method therefor (2010-08-24),
3. 7504289 - Process for forming an electronic device including transistor structures with sidewall spacers (2009-03-17),
4. 7402472 - Method of making a nitrided gate dielectric (2008-07-22),
5. 7338894 - Semiconductor device having nitridated oxide layer and method therefor (2008-03-04),
6. 7214590 - Method of forming an electronic device (2007-05-08),
7. 7126172 - Integration of multiple gate dielectrics by surface protection (2006-10-24),
8. 7041562 - Method for forming multiple gate oxide thickness utilizing ashing and cleaning (2006-05-09),
This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…