The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2022
Filed:
Jun. 29, 2021
Non-phosphoric acid-based silicon nitride film etching composition and etching method using the same
Applicant:
Industry-academic Cooperation Foundation, Yonsei University, Seoul, KR;
Inventors:
Sangwoo Lim, Seoul, KR;
Changjin Son, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); C09K 13/08 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31111 (2013.01); C09K 13/08 (2013.01); H01L 21/0217 (2013.01); H01L 21/311 (2013.01); H01L 21/31105 (2013.01);
Abstract
A non-phosphoric acid-based silicon nitride film etching composition includes 5 to 50 wt % of an organic acid-based chelating agent including an organic phosphonic acid group, a carboxylic acid group, or a combination thereof, based on a total weight of the etching composition. The etching composition for pressurization suppresses etching a silicon oxide film and selectively etches a silicon nitride film in a vertically laminated structure in which both the silicon nitride film and the silicon oxide film are exposed to a surface or the silicon nitride film and the silicon oxide film are alternately laminated.