The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2008
Filed:
Feb. 25, 2005
Applicants:
Sangwoo Lim, Austin, TX (US);
Paul A. Grudowski, Austin, TX (US);
Tien Ying Luo, Austin, TX (US);
Olubunmi O. Adetutu, Austin, TX (US);
Hsing H. Tseng, Austin, TX (US);
Inventors:
Sangwoo Lim, Austin, TX (US);
Paul A. Grudowski, Austin, TX (US);
Tien Ying Luo, Austin, TX (US);
Olubunmi O. Adetutu, Austin, TX (US);
Hsing H. Tseng, Austin, TX (US);
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A gate dielectric is treated with a nitridation step and an anneal. After this, an additional nitridation step and anneal is performed. The second nitridation and anneal results in an improvement in the relationship between gate leakage current density and current drive of the transistors that are ultimately formed.