Hsing H Tseng

Title: Hsing H Tseng: Innovator in Semiconductor Fabrication

Introduction

Hsing H Tseng is a prominent inventor based in Austin, TX, known for his significant contributions to semiconductor fabrication. With a total of 10 patents, Tseng has made remarkable advancements in the field, particularly in the development of high-k dielectrics.

Latest Patents

One of Tseng's latest patents focuses on the in-situ nitridation of high-k dielectrics. This semiconductor fabrication process involves depositing a high-k dielectric stack while incorporating nitrogen in-situ. The process includes forming a top high-k dielectric over the dielectric stack, followed by annealing both layers. The method also details the deposition of multiple high-k dielectric layers, each formed through distinct processing steps. Another notable patent describes a method for making a nitrided gate dielectric, which enhances the relationship between gate leakage current density and current drive in transistors.

Career Highlights

Throughout his career, Hsing H Tseng has worked with leading companies in the semiconductor industry, including Freescale Semiconductor, Inc. and Motorola Corporation. His expertise in semiconductor technology has positioned him as a key figure in advancing fabrication processes.

Collaborations

Tseng has collaborated with several talented individuals in his field, including Olubunmi O Adetutu and Tien Ying Luo. These collaborations have contributed to the innovative solutions he has developed in semiconductor technology.

Conclusion

Hsing H Tseng's work in semiconductor fabrication, particularly in high-k dielectrics, showcases his innovative spirit and dedication to advancing technology. His contributions continue to influence the industry and pave the way for future developments.