The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2006
Filed:
Oct. 20, 2004
Dina H. Triyoso, Austin, TX (US);
Olubunmi O. Adetutu, Austin, TX (US);
David C. Gilmer, Austin, TX (US);
Darrell Roan, Austin, TX (US);
James K. Schaeffer, Austin, TX (US);
Philip J. Tobin, Austin, TX (US);
Hsing H. Tseng, Austin, TX (US);
Dina H. Triyoso, Austin, TX (US);
Olubunmi O. Adetutu, Austin, TX (US);
David C. Gilmer, Austin, TX (US);
Darrell Roan, Austin, TX (US);
James K. Schaeffer, Austin, TX (US);
Philip J. Tobin, Austin, TX (US);
Hsing H. Tseng, Austin, TX (US);
Freescale Semiconductor, inc., Austin, TX (US);
Abstract
A method for forming at least a portion of a semiconductor device includes providing a semiconductor substrate, flowing a first precursor gas over the substrate to form a first metal-containing layer overlying the semiconductor substrate, and after completing said step of flowing the first precursor gas, flowing a first deuterium-containing purging gas over the first metal-containing layer to incorporate deuterium into the first metal-containing layer and to also purge the first precursor gas. The method may further include flowing a second precursor gas over the first metal-containing layer to react with the first metal-containing layer to form a metal compound-containing layer, and flowing a second deuterium-containing purging gas over the metal compound-containing layer to incorporate deuterium into the metal compound-containing layer and to also purge the second precursor gas.