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Philip J Tobin

This inventor holds 52 USPTO granted patents, primarily in Semiconductor Fabrication (CPC class 437 ). Top assignees: Motorola Corporation, Freescale Semiconductor,inc.. Active years: 1985-2012.

USPTO Granted Patents = 52

% Patents Active = 94.2

Average Co-Inventor Count = 2.9

ph-index = 29

Forward Citations = 3,015(Granted Patents)

Forward Citations (Not Self Cited) = 2,985(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Scottsdale, AZ (US) (1985 - 1986)
Austin, TX (US) (1988 - 2012)

Company Filing History:

Freescale Semiconductor,inc.

patents

Years Active: 1985-2012

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Areas of Expertise:

Dual-Metal Gate

High-K Dielectric

CMOS Devices

Transistor Formation

SOI Template

Dielectric Layer

MOSFET Device

Conductive Structure

Field Isolation

Composite Gate Dielectric

Thin Film Transistor

Metal Oxide Removal

52 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8178401 - Method for fabricating dual-metal gate device (2012-05-15),

2. 7868389 - Electronic device comprising a gate electrode including a metal-containing layer having one or more impurities (2011-01-11),

3. 7655550 - Method of making metal gate transistors (2010-02-02),

4. 7432164 - Semiconductor device comprising a transistor having a counter-doped channel region and method for forming the same (2008-10-07),

5. 7297588 - Electronic device comprising a gate electrode including a metal-containing layer having one or more impurities and a process for forming the same (2007-11-20),

6. 7091568 - Electronic device including dielectric layer, and a process for forming the electronic device (2006-08-15),

7. 7029980 - Method of manufacturing SOI template layer (2006-04-18),

8. 7015153 - Method for forming a layer using a purging gas in a semiconductor process (2006-03-21),

9. 6972224 - Method for fabricating dual-metal gate device (2005-12-06),

10. 6894353 - Capped dual metal gate transistors for CMOS process and method for making the same (2005-05-17),

11. 6818493 - Selective metal oxide removal performed in a reaction chamber in the absence of RF activation (2004-11-16),

12. 6717226 - Transistor with layered high-K gate dielectric and method therefor (2004-04-06),

13. 6432779 - Selective removal of a metal oxide dielectric (2002-08-13),

14. 6423632 - Semiconductor device and a process for forming the same (2002-07-23),

15. 6383873 - Process for forming a structure (2002-05-07),

Title: Philip J Tobin: A Pioneer in Semiconductor Innovations

Introduction

Philip J Tobin is a distinguished inventor based in Austin, TX, with an impressive portfolio featuring 52 patents. His contributions to the semiconductor industry have significantly advanced the fabrication and functionality of electronic devices. Tobin's inventive spirit and expertise continue to influence contemporary technologies.

Latest Patents

Among his latest innovations, Tobin has developed groundbreaking patents such as the "Method for Fabricating Dual-Metal Gate Device" and "Electronic Device Comprising a Gate Electrode Including a Metal-Containing Layer Having One or More Impurities." The former outlines a sophisticated method for creating a MOS transistor with a dual-metal gate using heterotypical metals, enabling enhanced device performance. The latter patent describes incorporating specific impurities into a metal-containing gate electrode to modify its work function for improved threshold voltages, thus optimizing the operation of p-channel and n-channel transistors.

Career Highlights

Philip J Tobin has had a noteworthy career with significant positions at leading companies, including Motorola Corporation and Freescale Semiconductor. His work has driven advancements in semiconductor technology, facilitating the creation of more efficient and reliable electronic devices.

Collaborations

Tobin has collaborated with esteemed professionals such as Bich-Yen Nguyen and Hsing-Huang Tseng. These collaborations have undoubtedly contributed to the richness and depth of his innovative endeavors, reflecting a shared commitment to excellence in the field of semiconductor research.

Conclusion

With a remarkable number of patents and a career marked by significant contributions to the semiconductor industry, Philip J Tobin stands out as a leading figure in innovation. His work continues to inspire future inventors and shape the landscape of technology. His expertise exemplifies the critical role of inventors in driving progress and fostering innovation in today's fast-paced world.

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