The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2010
Filed:
Jun. 30, 2006
James K. Schaeffer, Austin, TX (US);
David C. Gilmer, Austin, TX (US);
Mark V. Raymond, Austin, TX (US);
Philip J. Tobin, Austin, TX (US);
Srikanth B. Samavedam, Austin, TX (US);
James K. Schaeffer, Austin, TX (US);
David C. Gilmer, Austin, TX (US);
Mark V. Raymond, Austin, TX (US);
Philip J. Tobin, Austin, TX (US);
Srikanth B. Samavedam, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A semiconductor device has a gate with three conductive layers over a high K gate dielectric. The first layer is substantially oxygen free. The work function is modulated to the desired work function by a second conductive layer in response to subsequent thermal processing. The second layer is a conductive oxygen-bearing metal. With sufficient thickness of the first layer, there is minimal penetration of oxygen from the second layer through the first layer to adversely impact the gate dielectric but sufficient penetration of oxygen to change the work function to a more desirable level. A third layer, which is metallic, is deposited over the second layer. A polysilicon layer is deposited over the third layer. The third layer prevents the polysilicon layer and the oxygen-bearing layer from reacting together.