The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2006
Filed:
Dec. 22, 2004
Rama I. Hegde, Austin, TX (US);
Alexander A. Demkov, Austin, TX (US);
Philip J. Tobin, Austin, TX (US);
Dina H. Triyoso, Austin, TX (US);
Rama I. Hegde, Austin, TX (US);
Alexander A. Demkov, Austin, TX (US);
Philip J. Tobin, Austin, TX (US);
Dina H. Triyoso, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A mixture of materials can be used within a layer of an electronic device to improve electrical and physical properties of the layer. In one set of embodiments, the layer can be a dielectric layer, such as a gate dielectric layer or a capacitor dielectric layer. The dielectric layer can include O, and two or more dissimilar metallic elements. In one specific embodiment, two dissimilar elements may have the same single oxidation state and be miscible within each other. In one embodiment, the dielectric layer can include an alloy of (HfO)(ZrO), wherein x is between 0 and 1. Each of Hf and Zr has a single oxidation state of +4. Other combinations are possible. Improved electrical and physical properties can include better control over grain size, distribution of grain sizes, thickness of the layer across a substrate, improved carrier mobility, threshold voltage stability, or any combination thereof.