Radical oxidation and/or nitridation during metal oxide layer deposition process

Abstract

A metal oxide high-k dielectric is deposited on a semiconductor wafer in a manner that reduces dangling bonds in the dielectric without significantly thickening interfacial oxide thickness. A metal oxide precursor and radical oxygen and/or radical nitrogen are co-flowed over the semiconductor wafer to form the high-k dielectric. The radicals bond to dangling bonds of the metal of the metal oxide during the deposition process that is performed at the regular deposition temperature of less than about 400 degrees Celsius. The radical oxygen and radical nitrogen do not require the higher temperatures generally required in an anneal in order to attach to the dangling bonds of the metal. Thus, a high temperature post deposition anneal, which tends to cause interfacial oxide growth, is not required. The dielectric is of higher quality than is typical because the dangling bonds are removed during deposition rather than after the dielectric has been deposited.