The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
Dec. 12, 2007
Sangwoo Lim, Austin, TX (US);
Robert F. Steimle, Austin, TX (US);
Sangwoo Lim, Austin, TX (US);
Robert F. Steimle, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A semiconductor device includes a substrate (), a first insulating layer () over a surface of the substrate (), a layer of nanocrystals () over a surface of the first insulating layer (), a second insulating layer () over the layer of nanocrystals (). A nitriding ambient is applied to the second insulating layer () to form a barrier to further oxidation when a third insulating layer () is formed over the substrate (). The nitridation of the second insulating layer () prevents oxidation or shrinkage of the nanocrystals and an increase in the thickness of the first insulating layerwithout adding complexity to the process flow for manufacturing the semiconductor device ().