The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2006
Filed:
Oct. 12, 2004
Sangwoo Lim, Austin, TX (US);
Laegu Kang, Austin, TX (US);
Geoffrey (Choh-fei) Yeap, San Diego, CA (US);
Sangwoo Lim, Austin, TX (US);
Laegu Kang, Austin, TX (US);
Geoffrey (Choh-Fei) Yeap, San Diego, CA (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A multiple gate oxidation process is provided. The process comprises the steps of (a) providing a silicon substrate () having a sacrificial oxide layer () thereon; (b) depositing and patterning a first layer of photoresist () on the sacrificial oxide layer, thereby forming a first region in which the sacrificial oxide layer is exposed; (c) etching the exposed sacrificial oxide layer within the first region, thereby forming a first etched region; (d) growing a first oxide layer () within the first etched region; (e) depositing and patterning a second layer of photoresist () on the sacrificial oxide layer and first oxide layer, thereby forming a second region in which the sacrificial oxide layer is exposed; (f) etching the exposed sacrificial oxide layer within the second region, thereby forming a second etched region; and (g) growing a second oxide layer () within the second etched region.