The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2009
Filed:
Oct. 26, 2005
Sangwoo Lim, Seoul, KR;
Stanley L. Filipiak, Pflugerville, TX (US);
Paul A. Grudowski, Austin, TX (US);
Venkat R. Kolagunta, Austin, TX (US);
Sangwoo Lim, Seoul, KR;
Stanley L. Filipiak, Pflugerville, TX (US);
Paul A. Grudowski, Austin, TX (US);
Venkat R. Kolagunta, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
An electronic device can include a first transistor structure including a first gate electrode surrounded by a first sidewall spacer having a first stress and a second transistor structure including a second gate electrode surrounding a second sidewall spacer having second stress. The first sidewall spacer is an only sidewall spacer surrounding the first gate electrode or a closer sidewall spacer as compared to any other sidewall spacer that surrounds the first gate electrode and the second sidewall spacer is an only sidewall spacer surrounding the second gate electrode or a closer sidewall spacer as compared to any other sidewall spacer that surrounds the second gate electrode, wherein the first stress has a lower value as compared to the second stress. More than one process can be used to form the electronic device.