San Jose, CA, United States of America

Samuel Vance Dunton

This inventor holds 20 USPTO granted patents and 1 published patent application. Top assignees: Sandisk 3D LLC, Vlsi Technology, Inc., Lsi Logic Corporation. Active years: 1995-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Samuel Vance Dunton. Retrieved from https://idiyas.com/inventor/samuel-vance-dunton

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20 

% Patents Active = 45.0

Average Co-Inventor Count = 2.5

ph-index = 7

Forward Citations = 332(Granted Patents)


Company Filing History:


Years Active: 1995-2014

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20 patents (USPTO):Explore Patents

Title: Samuel Vance Dunton: Innovator in Memory Technology

Introduction

Samuel Vance Dunton, a prominent inventor based in San Jose, California, has made significant contributions to the field of memory technology. With an impressive portfolio of 20 patents, Dunton's work primarily focuses on methods and processes for improving the performance and reliability of memory arrays in semiconductor applications.

Latest Patents

Among his latest patents, one notable invention is the "Methods for protecting patterned features during trench etch." This patent outlines a method for forming a monolithic three-dimensional memory array. The method involves creating a first memory level above a substrate and monolithically forming a second memory level above it. Key features include the formation of substantially parallel conductors, pillars with conductive layers above vertically oriented diodes, and a precise etching process that ensures the integrity of the first conductive layer.

Another significant patent is the "Method for reducing dielectric overetch using a dielectric etch stop at a planar surface." This innovation presents a technique where a second dielectric material is deposited onto a substantially planar surface that coexists with conductive or semiconductor features. The selective etching technique allows for the formation of holes or trenches in the second dielectric material while protecting the underlying structures, showcasing Dunton's commitment to advancing semiconductor processing techniques.

Career Highlights

Dunton has a rich career, having worked with esteemed companies such as SanDisk 3D LLC and VLSI Technology, Inc. His expertise in memory technologies and etching processes has been pivotal to research and development in the semiconductor industry. Throughout his career, he has focused on enhancing the efficiency and capability of memory systems, making a lasting impact on the field.

Collaborations

Throughout his career, Dunton has teamed up with notable colleagues such as Usha Raghuram and Steven J. Radigan. Their collaboration has fostered an innovative environment, contributing to the advancement of memory technology and the successful execution of multiple projects.

Conclusion

Samuel Vance Dunton is a distinguished inventor whose contributions to memory technology continue to shape the semiconductor industry. With his extensive patent portfolio and collaborations with leading professionals, Dunton exemplifies the spirit of innovation that drives advancements in technology. His work not only enhances current memory systems but also lays the groundwork for future developments in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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