Sameer S Pradhan

This inventor holds 29 USPTO granted patents and 3 published patent applications and 3 EPO patents, primarily in Non-Planar Transistors. Top assignees: Intel Corporation, Mie Fujitsu Semiconductor Limited, Suvolta, Inc.. Active years: 2010-2021.

USPTO Granted Patents = 29 (Patent Applications = 3)

% Patents Active = 93.1

EPO Patents = 3 (Patent Applications = 5)

Average Co-Inventor Count = 3.6

ph-index = 6

Forward Citations = 141(Granted Patents)

Location History:

Campbell, CA (US) (2015 - 2016)
San Jose, CA (US) (2014 - 2018)
Portland, OR (US) (2010 - 2021)

Company Filing History:

Mie Fujitsu Semiconductor Limited

Years Active: 2010-2021

Loading Chart...

Areas of Expertise:

Non-Planar Transistors

Tungsten Gates

Interlayer Dielectric

Source/Drain Contacts

Dopant Profile

Junction Leakage

CMOS Devices

Capping Dielectric

Epitaxial Layers

Dopant Migration

Integrated Circuits

29 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10998445 - Interlayer dielectric for non-planar transistors (2021-05-04),

2. 10770591 - Source/drain contacts for non-planar transistors (2020-09-08),

3. 10693006 - Interlayer dielectric for non-planar transistors (2020-06-23),

4. 10283640 - Source/drain contacts for non-planar transistors (2019-05-07),

5. 10056488 - Interlayer dielectric for non-planar transistors (2018-08-21),

6. 10020375 - Tungsten gates for non-planar transistors (2018-07-10),

7. 9893148 - Method for fabricating a transistor device with a tuned dopant profile (2018-02-13),

8. 9853156 - Source/drain contacts for non-planar transistors (2017-12-26),

9. 9812546 - Tungsten gates for non-planar transistors (2017-11-07),

10. 9637810 - Tungsten gates for non-planar transistors (2017-05-02),

11. 9634124 - Interlayer dielectric for non-planar transistors (2017-04-25),

12. 9580776 - Tungsten gates for non-planar transistors (2017-02-28),

13. 9577041 - Method for fabricating a transistor device with a tuned dopant profile (2017-02-21),

14. 9490347 - Capping dielectric structures for transistor gates (2016-11-08),

15. 9425316 - Source/drain contacts for non-planar transistors (2016-08-23),

Title: The Innovative Journey of Sameer S Pradhan

Introduction: Sameer S Pradhan is a visionary inventor based in Portland, Oregon, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Sameer S Pradhan holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his commitment to creating a more efficient and eco-friendly future.

Career Highlights: With a background in engineering and a passion for problem-solving, Sameer S Pradhan has led numerous successful projects that have revolutionized industries and improved the quality of life for many.

Collaborations: Throughout his career, Sameer S Pradhan has collaborated with leading research institutions, universities, and tech companies to bring his ideas to life and make a lasting impact on society.

Conclusion: Sameer S Pradhan's dedication to innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the landscape of technology for years to come.