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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US RE51079 B1

PDFFull Text
Date of Patent:
Oct. 13, 2026

Filed:

Apr. 14, 2023

Source/drain contacts for non-planar transistors

Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Sameer S. Pradhan, Portland, OR (US);

Subhash M. Joshi, Hillsboro, OR (US);

Jin-Sung Chun, Hillsboro, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:

Schwabe, Williamson & Wyatt, P.C.

Primary Examiner:

Leonardo Andujar

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/283 (2006.01); H01L 23/48 (2006.01); H01L 29/16 (2006.01); H10D 30/01 (2025.01); H10D 30/60 (2025.01); H10D 30/62 (2025.01); H10D 62/83 (2025.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01); H10P 14/20 (2026.01); H10P 14/40 (2026.01); H10P 95/00 (2026.01); H10W 20/00 (2026.01); H10W 72/00 (2026.01);
U.S. Cl.
CPC ...
H10D 30/62 (2025.01); H10D 30/024 (2025.01); H10D 30/025 (2025.01); H10D 30/60 (2025.01); H10D 30/6211 (2025.01); H10D 30/6219 (2025.01); H10D 62/83 (2025.01); H10D 64/017 (2025.01); H10D 64/021 (2025.01); H10D 64/62 (2025.01); H10P 14/3411 (2026.01); H10P 14/40 (2026.01); H10P 14/414 (2026.01); H10P 95/00 (2026.01); H10W 20/069 (2026.01); H10W 72/00 (2026.01); H10D 64/0112 (2026.01); H10W 20/033 (2026.01); H10W 20/047 (2026.01);
Abstract

The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of source/drain contacts within non-planar transistors, wherein a titanium-containing contact interface may be used in the formation of the source/drain contact with a discreet titanium silicide formed between the titanium-containing interface and a silicon-containing source/drain structure.

Find Patent Forward Citations

Pradhan, Sameer. (2026). Source/drain contacts for non-planar transistors (U.S. Patent No. RE51079). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/RE51079

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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