The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Jul. 21, 2017
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Sameer S. Pradhan, Portland, OR (US);
Subhash M. Joshi, Hillsboro, OR (US);
Jin-Sung Chun, Hillsboro, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 23/48 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 21/283 (2006.01); H01L 21/3205 (2006.01); H01L 29/16 (2006.01); H01L 29/45 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/02 (2013.01); H01L 21/02532 (2013.01); H01L 21/283 (2013.01); H01L 21/32053 (2013.01); H01L 21/76897 (2013.01); H01L 23/48 (2013.01); H01L 29/16 (2013.01); H01L 29/41791 (2013.01); H01L 29/456 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/66666 (2013.01); H01L 29/66795 (2013.01); H01L 29/78 (2013.01); H01L 29/7851 (2013.01); H01L 21/28518 (2013.01); H01L 21/76843 (2013.01); H01L 21/76855 (2013.01); H01L 2924/0002 (2013.01);
Abstract
The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of source/drain contacts within non-planar transistors, wherein a titanium-containing contact interface may be used in the formation of the source/drain contact with a discreet titanium silicide formed between the titanium-containing interface and a silicon-containing source/drain structure.