Kitaibaraki, Japan

Ryuichi Hirano

This inventor holds 27 USPTO granted patents and 10 EPO patents, primarily in Compound Semiconductors. Top assignees: Nippon Mining & Metals Co., Ltd., Olympus Corporation, Jx Nippon Mining Metals Corporation. Active years: 1995-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ryuichi Hirano. Retrieved from https://idiyas.com/inventor/ryuichi-hirano

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 77.8

 

Average Co-Inventor Count = 2.5

ph-index = 3

Forward Citations = 32(Granted Patents)


Location History:

  • Toda, JP (1995)
  • Hachioji, JP (2006 - 2015)
  • Kitaibaraki, JP (2001 - 2022)
  • Tokyo, JP (2009 - 2024)

Company Filing History:


Years Active: 1995-2024

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Areas of Expertise:
Image Capturing Unit
Radiation Detection Element
Indium Phosphide Wafer
Photoelectric Conversion
Compound Semiconductor
Epitaxial Growth
Microscope System
Tissue Culture
Wafer Storage Container
CdTe Semiconductor
Electronic Imaging Apparatus
Observation Apparatus
27 patents (USPTO):Explore Patents

Title: Ryuichi Hirano: Innovations in Compound Semiconductors

Introduction

Ryuichi Hirano, an accomplished inventor based in Kitaibaraki, Japan, has made significant contributions to the field of compound semiconductors. With a remarkable total of 24 patents to his name, his research and innovations continue to shape the landscape of semiconductor technology.

Latest Patents

Among his latest patents, Ryuichi developed methods for producing high-quality single crystals of compound semiconductors. One notable patent describes a large diameter InP single crystal substrate, over 75 mm in diameter, achieving a high electrical activation rate of zinc (Zn) even in highly doped regions. His innovative method involves controlling the cooling process of the InP single crystal ingot while rotating it, ultimately leading to an electrical activation rate of Zn exceeding 85%.

Additionally, Ryuichi's work on a photoelectric conversion element utilizes group III-IV compound semiconductor single crystals with zinc as an impurity. Here, the challenge of increasing substrate size without sacrificing conversion efficiency is addressed through a novel growth method that maintains a low dislocation density while allowing for an average zinc concentration conducive to crystal growth.

Career Highlights

Ryuichi has built a formidable career by working with prominent companies in the semiconductor industry, including Nippon Mining & Metals Co., Ltd. and Olympus Corporation. His experiences at these institutions have facilitated the practical application of his innovative techniques and patents.

Collaborations

Throughout his career, Ryuichi has collaborated with esteemed colleagues, such as Akira Noda and Hideki Kurita, contributing to a shared vision of advancing semiconductor technology. Their combined expertise has led to significant advancements in the production and application of compound semiconductors.

Conclusion

Ryuichi Hirano's contributions to the field of compound semiconductors and his 24 patents demonstrate a profound commitment to innovation. His work not only enhances the understanding of semiconductor production methods but also paves the way for future advancements in the industry. As technology continues to evolve, Ryuichi's innovative approach will undoubtedly leave a lasting impact on the semiconductor landscape.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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