Olympus Corporation

Nippon Mining & Metals Co., Ltd.

Jx Nippon Mining Metals Corporation

Japan Energy Corporation

Jx Metals Corporation

Nikko Materials Company, Limited

Robit Plc

Ryuichi Hirano

Akira Noda

Kenichi Koyama

Atsuhiro Tsuchiya

Kazuhiro Hasegawa

Hideaki Endo

Hideki Kurita

Akitsugu Kagayama

Katsuyoshi Yamaguchi

Kenji Suzuki

Koji Murakami

Masashi Nakamura

Masaru Ota

Hideyuki Taniguchi

Yuichiro Hashimoto

Masahiro Arai

Tetsuya Shirota

Manabu Kawabe

Atsushi Yonetani

Tsuyoshi Mochizuki

Hideyuki Kawanabe

Atsutoshi Arakawa

Hideki Obuchi

Nobuhito Makino

Keita Kawahira

Eiji Ikeda

Suguru Oota

Masayuki Kimura

Akio Koyama

Shigeo Katsura

Kaoru Kawakita

Masashi c/o Nippon Mining & Metals Co Nakamura

Suguru c/o Nippon Mining & Metals Co Oota

An image capturing unit in an inspection system for performing an inspection target appearance inspection, the image capturing unit comprising, an image capture unit, an illumination unit arranged in a periphery of the image capture unit, and a protective unit covering the image capture unit and the illumination unit, wherein the protective unit includes a plate-like member configured by a first planar portion and a second planar portion being connected through a bent portion bent in a dog leg shape, and the image capture unit is located on a back side of the first planar portion.

Image capturing unit and inspection system

Provided is a CdZnTe monocrystalline substrate which has a small leakage current even when a voltage is applied from a low voltage to a high voltage, and which has a lower variation in resistivity with respect to applied voltage changes from 0 to 900 V, and which can maintain a stable resistivity. A semiconductor wafer comprising a cadmium zinc telluride monocrystal having a zinc concentration of 4.0 at % or more and 6.5 at % or less and a chlorine concentration of 0.1 ppm by weight or more and 5.0 ppm by weight or less, wherein when a voltage is applied in a range of from 0 to 900 V, the semiconductor wafer has a resistivity for each applied voltage value of 1.0×10Ωcm or more and 7.0×10Ωcm or less, and wherein a relative variation coefficient of each resistivity to the applied voltages in a range of from 0 to 900 V is 100% or less.

Semiconductor wafer, radiation detection element, radiation detector, and production method for compound semiconductor monocrystalline substrate

Provided is a stable CdZnTe monocrystalline substrate having a small leakage current even when a high voltage is applied and having a lower variation in resistivity with respect to variations in applied voltage values. A semiconductor wafer comprising a cadmium zinc telluride monocrystal having a zinc concentration of 4.0 at % or more and 6.5 at % or less and a chlorine concentration of 0.1 ppm by mass or more and 5.0 ppm by mass or less, wherein the semiconductor wafer has a resistivity of 1.0×10Ωcm or more and 1.0×10Ωcm or less when a voltage of 900 V is applied, and wherein a ratio (variation ratio) of the resistivity at application of 0 V to the resistivity at application of a voltage of 900 V is 20% or less.

Provided is a large diameter InP single crystal substrate having a diameter of 75 mm or more, which can achieve a high electrical activation rate of Zn over a main surface of the substrate even in a highly doped region having a Zn concentration of 5&#xd7;10cmor more; and a method for producing the same. An InP single crystal ingot is cooled such that a temperature difference of 200&#xb0; C. is decreased for 2 to 7.5 minutes, while rotating the InP single crystal ingot at a rotation speed of 10 rpm or less, and the cooled InP single crystal ingot is cut into a thin plate, thereby allowing production of the InP single crystal substrate having an electrical activation rate of Zn of more than 85% over the main surface of the substrate even in a highly doped region having a Zn concentration of 5&#xd7;10cmor more.

Compound semiconductor and method for producing single crystal of compound semiconductor

In this photoelectric conversion element wherein group III-IV compound semiconductor single crystals containing zinc as an impurity are used as a substrate, the substrate is increased in size without lowering conversion efficiency. A heat-resistant crucible is filled with raw material and a sealant, and the raw material and sealant are heated, thereby melting the raw material into a melt, softening the encapsulant, and covering the melt from the top with the encapsulant. The temperature inside the crucible is controlled such that the temperature of the top of the encapsulant relative to the bottom of the encapsulant becomes higher in a range that not equal or exceed the temperature of bottom of the encapsulant, and seed crystal is dipped in the melt and pulled upward with respect to the melt, thereby growing single crystals from the seed crystal. Thus, a large compound semiconductor wafer that is at least two inches in diameter and has a low dislocation density of 5,000 cmcan be obtained, despite having a low average zinc concentration of 5&#xd7;10cmto 3&#xd7;10cm, at which a crystal hardening effect does not manifest.

Indium phosphide wafer, photoelectric conversion element, and method for producing a monocrystalline indium phosphide

The present invention increases the conversion efficiency of a photoelectric conversion element that uses cadmium zinc telluride or cadmium telluride (Cd(Zn)Te) compound semiconductor single crystals containing a group 1A element as an impurity. A heat-resistant pot is filled with raw material and a group 1A element, which is reacted with a portion of the raw material, and the container is heated, thereby melting the raw material into a melt and diffusing the dissociated group 1A element in the melt, producing single crystals from the melt. Compound semiconductor single crystals for photoelectric conversion elements having a hole concentration of 4&#xd7;10cmto 1&#xd7;10cmare produced in this manner. Using a substrate () that has been cut out from the compound semiconductor single crystals for photoelectric conversion elements enables the conversion efficiency of a photoelectric conversion element () to be increased.

Compound semiconductor single crystal ingot for photoelectric conversion devices, photoelectric conversion device, and production method for compound semiconductor single crystal ingot for photoelectric conversion devices

A microscope system includes a microscope body having a base portion forming a foundation, an arm portion extending substantially parallel to a bottom surface of the base portion, and a frame portion connecting ends of the base portion and the arm portion, having substantially a C shape in side view and holding an illumination optical system ejecting illumination light from a light source to a specimen. A light source unit is connected with the microscope body and radiates illumination light to the illumination optical system. A focusing unit supports a stage for placing the specimen and at least holding an objective lens focusing the specimen by collecting observation light from the specimen on the stage. The microscope body and the focusing unit do not contact each other in a state where an optical axis of the objective lens coincides with an optical axis of the illumination light.

Microscope system

A method for producing a low-dislocation InP single crystal suitably used for an optical device such as a semiconductor laser, and the low-dislocation InP single crystal wafer are provided. In a liquid-encapsulated Czochralski method in which a semiconductor raw material and an encapsulant are contained in a raw material melt containing part comprising a cylindrical crucible having a bottom, the raw material containing part is heated to melt the raw material, and a seed crystal is brought into contact with a surface of a melt of the raw material in a state of being covered with the encapsulant to grow a crystal while the seed crystal is raised; a crystal shoulder part is grown from the seed crystal by setting a temperature gradient in a crystal growth direction to 25&#xb0; C./cm or less and setting a temperature-fall amount to 0.25&#xb0; C./hr or more. Thus, an iron-doped or undoped InP single crystal wafer in which an area having a dislocation density of 500/cmor less occupies 70% or more is realized.

InP single crystal wafer and method for producing InP single crystal

Provided is a CdTe-based semiconductor substrate for epitaxial growth, which is capable of growing good-quality epitaxial crystals without urging a substrate user to implement etching treatment before the epitaxial growth. A CdTe-based semiconductor substrate, in which tracks of linear polishing damage with a depth of 1 nm or more are not observed within a viewing range of 10 &#x3bc;m&#xd7;10 &#x3bc;m when a surface of the substrate is observed by an atomic force microscope, and orange peel defects are not observed when the surface of the substrate is visually observed under a fluorescent lamp, can grow the good-quality epitaxial crystals.

CdTe semiconductor substrate for epitaxial growth and substrate container

A tissue culture microscope apparatus includes a culture unit that includes a chamber in which a specimen is put, and maintains the chamber at a predetermined temperature to culture the specimen; an observation unit that forms an observation image of the specimen put in the chamber; and a liquid supply unit that stores a liquid in a protrusion portion penetrating into a wall of the chamber and protruding to an inside of the chamber, matches a temperature of the liquid with the temperature of the chamber, and injects the liquid from the protrusion portion to the specimen.

Tissue culture microscope apparatus

A microscope system having a selectively mountable optical element, comprises: a first noncontact type storage medium, being equipped in the optical element, for enabling a noncontact readout of information externally; and a first readout unit for reading information non-contactingly from the first noncontact type storage medium, wherein the first noncontact type storage medium stores information related to the optical element.

A culture observation apparatus, which is used for observing a cultured cell while culturing the cell, includes a culture device that cultures the cultured cell, and a microscope used for observing the cultured cell. The culture device includes a first space that is controlled to an environment suitable for culture of the cell, and a second space that is controlled to a lower humidity condition in comparison with the first space. The microscope includes an objective optical unit including an objective lens; the objective optical unit having at least one portion located in the second space, and another portion extending into the first space through an opening formed in a partition wall that separates the first space and the second space, with a gap between the objective optical unit and the partition wall being sealed by a sealing member, and the objective lens includes a plurality of lens groups, with mutual spaces among the lens groups vented to the second space.

Culture observation apparatus

It is to provide a vapor phase growth method in which an epitaxial layer consisting of a compound semiconductor such as InAlAs, can be grown, with superior reproducibility, on a semiconductor substrate such as Fe-doped InP. In vapor phase growth method for growing an epitaxial layer on a semiconductor substrate, a resistivity of the semiconductor substrate at a room temperature is previously measured, a set temperature of the substrate is controlled depending on the resistivity at the room temperature such that a surface temperature of the substrate is a desired temperature regardless of the resistivity of the semiconductor substrate, and the epitaxial layer is grown.

Vapor phase growth method

Provided is a semiconductor substrate for epitaxial growth which does not require any etching treatment as a pretreatment in the stage of performing an epitaxial growth of HgCdTe film. A CdTe system compound semiconductor substrate for the epitaxial growth of the HgCdTe film is housed in an inactive gas atmosphere, in a predetermined period of time (for example, 10 hours) after mirror finish treatment thereof, to thereby regulate the proportion of Te oxide of the total amount of Te on the substrate surface which is obtained by XPS measurement so as to be not more than 30%.

Growing community of inventors

Kitaibaraki, Japan

Ryuichi Hirano