The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Sep. 30, 2010
Kenji Suzuki, Kitaibaraki, JP;
Hideyuki Taniguchi, Kitaibaraki, JP;
Hideki Kurita, Kitaibaraki, JP;
Ryuichi Hirano, Kitaibaraki, JP;
Kenji Suzuki, Kitaibaraki, JP;
Hideyuki Taniguchi, Kitaibaraki, JP;
Hideki Kurita, Kitaibaraki, JP;
Ryuichi Hirano, Kitaibaraki, JP;
JX Nippon Mining & Metals Corporation, Tokyo, JP;
Abstract
Provided is a CdTe-based semiconductor substrate for epitaxial growth, which is capable of growing good-quality epitaxial crystals without urging a substrate user to implement etching treatment before the epitaxial growth. A CdTe-based semiconductor substrate, in which tracks of linear polishing damage with a depth of 1 nm or more are not observed within a viewing range of 10 μm×10 μm when a surface of the substrate is observed by an atomic force microscope, and orange peel defects are not observed when the surface of the substrate is visually observed under a fluorescent lamp, can grow the good-quality epitaxial crystals.