Kitaibaraki, Japan

Hideyuki Taniguchi



Average Co-Inventor Count = 2.7

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2006-2013

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2 patents (USPTO):Explore Patents

Title: Innovations of Hideyuki Taniguchi

Introduction

Hideyuki Taniguchi is a notable inventor based in Kitaibaraki, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of CdTe-based materials. With a total of 2 patents, his work has advanced the capabilities of epitaxial growth processes.

Latest Patents

Taniguchi's latest patents include a CdTe semiconductor substrate for epitaxial growth and a substrate container. The CdTe-based semiconductor substrate is designed to facilitate the growth of high-quality epitaxial crystals without requiring etching treatment beforehand. This substrate exhibits no tracks of linear polishing damage and shows no orange peel defects, ensuring optimal conditions for crystal growth. Additionally, his patent for a CdTe-based compound semiconductor single crystal for electro-optic elements details a method of chlorine and indium doping, which enhances the properties of the semiconductor for specific applications.

Career Highlights

Throughout his career, Taniguchi has worked with prominent companies such as Nikko Materials Company, Limited and JX Nippon Mining & Metals Corporation. His experience in these organizations has allowed him to refine his expertise in semiconductor materials and their applications.

Collaborations

Taniguchi has collaborated with notable colleagues, including Ryuichi Hirano and Kenji Suzuki. These partnerships have contributed to the advancement of semiconductor technologies and innovations in the field.

Conclusion

Hideyuki Taniguchi's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the industry positively, paving the way for future innovations.

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