The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2024
Filed:
Dec. 05, 2019
Jx Metals Corporation, Tokyo, JP;
JX METALS CORPORATION, Tokyo, JP;
Abstract
Provided is a CdZnTe monocrystalline substrate which has a small leakage current even when a voltage is applied from a low voltage to a high voltage, and which has a lower variation in resistivity with respect to applied voltage changes from 0 to 900 V, and which can maintain a stable resistivity. A semiconductor wafer comprising a cadmium zinc telluride monocrystal having a zinc concentration of 4.0 at % or more and 6.5 at % or less and a chlorine concentration of 0.1 ppm by weight or more and 5.0 ppm by weight or less, wherein when a voltage is applied in a range of from 0 to 900 V, the semiconductor wafer has a resistivity for each applied voltage value of 1.0×10Ωcm or more and 7.0×10Ωcm or less, and wherein a relative variation coefficient of each resistivity to the applied voltages in a range of from 0 to 900 V is 100% or less.