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For the Inventor, By the Inventor

Machida, Japan

Ryoiku Togei

This inventor holds 10 USPTO granted patents. Top assignees: Fujitsu Corporation, Vlsi Technology Research Association. Active years: 1976-1987.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ryoiku Togei. Retrieved from https://idiyas.com/inventor/ryoiku-togei

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 10

% Patents Active = 100.0

Average Co-Inventor Count = 1.5

ph-index = 5

Forward Citations = 93(Granted Patents)


Location History:

  • Kawasaki, J (1976)
  • Kawasaki, JA (1977)
  • Kawasaki, JP (1980)
  • Machida, JP (1981 - 1987)

Company Filing History:

goldMedal9 out of 39,374 
 
Fujitsu Corporation
 patents
silverMedal1 out of 50 
 
Vlsi Technology Research Association
 patents

Years Active: 1976-1987

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10 patents (USPTO):Explore Patents
1. 4672408 - Non-volatile semiconductor memory device (1987-06-09),
2. 4571607 - Semiconductor device (1986-02-18),
3. 4330849 - Complementary semiconductor memory device (1982-05-18),
4. 4292091 - Method of producing semiconductor devices by selective laser irradiation (1981-09-29),
5. 4247863 - Semiconductor memory device (1981-01-27),
6. 4228444 - Semiconductor device (1980-10-14),
7. 4062037 - Semiconductor memory device (1977-12-06),
8. 4060796 - Semiconductor memory device (1977-11-29),
9. 4031608 - Process for producing semiconductor memory device utilizing selective (1977-06-28),
10. 3996658 - Process for producing semiconductor memory device (1976-12-14),

Title: Ryoiku Togei: Innovator in Semiconductor Technology

Introduction

Ryoiku Togei is a prominent inventor based in Kawasaki, Japan. He is known for his significant contributions to the field of semiconductor technology. His innovative work has led to advancements that enhance the performance and efficiency of semiconductor devices.

Latest Patents

Ryoiku Togei holds a patent for a "Process for producing semiconductor memory device." This invention focuses on reducing the distance between two electrodes of a CCD device to an extremely small value, thereby increasing the memory density of the CCD device. The process involves forming a first electrode and an insulating layer on the entire top surface of the semiconductor wafer. Subsequently, the material for another electrode is placed on the wafer's surface, and these layers are selectively removed to create a CCD structure.

Career Highlights

Ryoiku Togei is associated with Fujitsu Corporation, where he has made significant strides in semiconductor research and development. His work has not only contributed to the company's portfolio but has also influenced the broader technology landscape.

Collaborations

Some of his notable coworkers include Akira Takei and Yoshihiko Hika. Their collaborative efforts have further advanced the field of semiconductor technology.

Conclusion

Ryoiku Togei's innovative contributions to semiconductor technology exemplify the impact of dedicated inventors in advancing modern electronics. His patent for improving CCD devices showcases his commitment to enhancing memory density and efficiency in semiconductor applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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