The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 1977
Filed:
Apr. 08, 1976
Applicant:
Inventors:
Assignee:
Fujitsu Ltd., , JA;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
29578 ; 29571 ; 148174 ; 148187 ; 357 24 ; 357 41 ; 357 52 ; 357 59 ;
Abstract
A semiconductor memory device provided with one transferring electrode, one gate electrode and one diode of a charge coupled device is produced by a process with a reduced number of steps of diffusion and patterning. Both electrodes consist of doped polycrystalline silicon and both are electrically connected to a resistive layer which consists of non-doped polycrystalline silicon. A potential barrier between the region of both electrodes is removed due to the resistive layer. The resistive layer is formed by utilization of a two stage deposition of the polycrystalline silicon layer with appropriate masking steps.