The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 1981
Filed:
Feb. 25, 1980
Applicant:
Inventor:
Ryoiku Togei, Machida, JP;
Assignee:
VLSI Technology Research Association, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 148187 ; 357 91 ; 427 531 ;
Abstract
A method of producing a semiconductor device comprises a step of forming a field isolating oxide layer from an amorphous silicon layer by oxidation at a relatively low temperature. Prior to the oxidizing treatment, a portion of the amorphous silicon layer is recrystallized into a single-crystalline silicon layer by laser irradiation.