The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 1981
Filed:
Aug. 30, 1978
Ryoiku Togei, Machida, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
Disclosed herein is a small-sized semiconductor memory device, wherein an N.sup.+ (P.sup.+)-type single region having an input function and an output function and an electrode for controlling the electrical potential in a P(N)-type Si substrate are provided on the top surface of the P(N)-type Si substrate. In order to store carriers, i.e., an information, in the bulk of the substrate, an N (P)-type buried layer is formed below the N.sup.+ (P.sup.+)-type input-output region, mentioned above. Information is quickly transferred from or into the buried layer by means of the punch-through effect, which is realized by spreading a depletion layer formed at a PN junction between the input-output region and the Si substrate. Since the carriers are stored in the bulk of the substrate, the size of the memory device is reduced and the surface property of the device does not exert a harmful influence on the carriers.