The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 1976
Filed:
Mar. 30, 1976
Applicant:
Inventors:
Assignee:
Fujitsu Ltd., Kanagawa, J;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01J / ;
U.S. Cl.
CPC ...
29571 ; 29578 ; 357 24 ;
Abstract
A distance between two electrodes of a CCD device is reduced to an extremely small value, thereby increasing the memory density, of the CCD device. In the process of the present invention, upon formation of a first electrode, an insulating layer is formed on the entire top surface of the semiconductor wafer. The material of another electrode is then placed on the entire top surface of the wafer. These layers are then selectively removed to form a CCD structure.
Takei, Akira. (1976). Process for producing semiconductor memory device (U.S. Patent No. 3996658). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/3996658
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile