The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 1980
Filed:
Sep. 29, 1978
Ryoiku Togei, Kawasaki, JP;
Fujitsu Limited, Kanagawa, JP;
Abstract
On a semiconductor substrate (or layer) of one conductivity type, a semiconductor layer of the opposite conductivity type is formed and a source and a drain region of the same conductivity type as the semiconductor substrate are formed in the semiconductor layer. Junctions are respectively formed between the source and drain regions and the semiconductor layer at such positions where punch-through may easily occur between the source and drain regions and the semiconductor substrate when operating voltages are applied to these regions. A local potential distribution generation electrode, which makes an ohmic contact with the semiconductor layer, is formed between the source and drain regions. By applying voltages to both the local potential distribution generation electrode and a drain electrode at substantially the same time, a potential barrier normally formed in the semiconductor layer is removed, thereby to inject carriers from the source region to the drain region through the semiconductor substrate (or layer).
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile