The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 1982

Filed:

Aug. 27, 1980
Applicant:
Inventors:

Ryoiku Togei, Machida, JP;

Yoshihiko Hika, Yokohama, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365181 ; 357 24 ;
Abstract

Disclosed herein is a semiconductor memory device comprising a semiconductor substrate having a first conductivity type, first and second regions of a second conductivity type opposite to said first type formed in the surface of the semiconductor substrate and separated with a certain space therebetween, a third region of the first conductivity type formed in the second region, and a gate electrode formed on an insulating film on the semiconductor substrate between the first and the third regions. By applying a gate voltage to the gate electrode, charge carriers are transferred between the first and second regions in accordance with the data to be stored. The stored data is read out by applying a prescribed gate voltage to the gate electrode and by detecting the value of the current between the third region and the semiconductor substrate.


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