IDiyas

For the Inventor, By the Inventor

Los Angeles, CA, United States of America

Ruigang Li

USPTO Granted Patents = 8 

Average Co-Inventor Count = 3.4

ph-index = 2

Forward Citations = 10(Granted Patents)


Location History:

  • Fremont, CA (US) (2013 - 2019)
  • Los Angeles, CA (US) (2020 - 2023)

Company Filing History:

goldMedal3 out of 3 
 
Az Power, Inc
 patents
silverMedal1 out of 15,458 
 
University of California
 patents
bronzeMedal3 out of 832,680 
Other
 patents
where one patent can have more than one assignee

Years Active: 2013-2024

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8 patents (USPTO):Explore Patents
1. 12125924 - Merged PiN Schottky (MPS) diode with plasma spreading layer and manufacturing method thereof (2024-10-22),
2. 11728439 - Merged PiN Schottky (MPS) diode with plasma spreading layer and manufacturing method thereof (2023-08-15),
3. 11380757 - Metal terminal edge for semiconductor structure and method of forming the same (2022-07-05),
4. 10672883 - Mixed trench junction barrier Schottky diode and method fabricating same (2020-06-02),
5. 10529867 - Schottky diode having double p-type epitaxial layers with high breakdown voltage and surge current capability (2020-01-07),
6. 10497636 - Passivation for silicon carbide (SiC) device and method for fabricating same (2019-12-03),
7. 9960247 - Schottky barrier structure for silicon carbide (SiC) power devices (2018-05-01),
8. 8481386 - Nanocrystal memories and methods of forming the same (2013-07-09),
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