The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2020
Filed:
Oct. 16, 2018
NA Ren, Los Angeles, CA (US);
Zheng Zuo, Los Angeles, CA (US);
Ruigang LI, Los Angeles, CA (US);
AZ Power, Inc, Culver City, CA (US);
Abstract
A method for manufacturing a SiC mixed trench Schottky diode may include steps of providing a substrate and an epitaxial layer on top of the substrate; forming a plurality of trenches on a surface of the epitaxial layer; conducting ion implantation at a bottom portion of each trench; conducting ion implantation at sidewalls of each trench; forming an ohmic contact metal at a bottom portion of the Schottky diode; forming a Schottky contact metal on top of the epitaxial layer and in the trenches. In one embodiment, the substrate is an Ntype SiC and the epitaxial layer is an Ntype SiC. In another embodiment, the step of forming a plurality of trenches on a surface of the epitaxial layer may include the step of etching the surface of the epitaxial layer by either dry etching or wet etching.