For the Inventor, By the Inventor

Enter inventor name

Culver City, CA, United States of America

Zheng Zuo

USPTO Granted Patents = 6 (Patent Applications = 3)

Average Co-Inventor Count = 3.3

ph-index = 1

Forward Citations = 5(Granted Patents)

Location History:

Culver City, CA (US) (2018 - 2022)
Los Angeles, CA (US) (2020 - 2023)

Company Filing History:

3 out of 832,891

Other

patents

Years Active: 2018-2023

Loading Chart...

6 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11728439 - Merged PiN Schottky (MPS) diode with plasma spreading layer and manufacturing method thereof (2023-08-15),

2. 11380757 - Metal terminal edge for semiconductor structure and method of forming the same (2022-07-05),

3. 10672883 - Mixed trench junction barrier Schottky diode and method fabricating same (2020-06-02),

4. 10529867 - Schottky diode having double p-type epitaxial layers with high breakdown voltage and surge current capability (2020-01-07),

5. 10497636 - Passivation for silicon carbide (SiC) device and method for fabricating same (2019-12-03),

6. 9960247 - Schottky barrier structure for silicon carbide (SiC) power devices (2018-05-01),

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com

Loading…