The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2022

Filed:

Dec. 10, 2020
Applicants:

Zheng Zuo, Culver City, CA (US);

Ruigang LI, Los Angeles, CA (US);

Da Teng, Culver City, CA (US);

Inventors:

Zheng Zuo, Culver City, CA (US);

Ruigang Li, Los Angeles, CA (US);

Da Teng, Culver City, CA (US);

Assignee:

Other;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/872 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0619 (2013.01); H01L 29/1608 (2013.01); H01L 29/872 (2013.01);
Abstract

In one aspect, a semiconductor device may include a semiconductor substrate formed of silicon carbide; and an edge termination having a first metal layer and a second metal layer, wherein the first metal layer is deposited and patterned spacedly on the semiconductor substrate and the second metal layer is deposited and patterned onto at least a portion of the spaced first metal layer and onto the semiconductor substrate between said spaced first metal layer, and wherein the first metal layer comprises a high work function metal, while the second metal layer comprises a low work function metal. In one embodiment, the high work function metal includes Silver, Aluminum, Chromium, Nickel, and Gold; and the low work function metal includes Titanium and Nickel Silicide.


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