The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Nov. 21, 2016
Zheng Zuo, Culver City, CA (US);
Bochao Huang, Chino, CA (US);
Ruigang LI, Fremont, CA (US);
Da Teng, Culver City, CA (US);
Zheng Zuo, Culver City, CA (US);
Bochao Huang, Chino, CA (US);
Ruigang Li, Fremont, CA (US);
Da Teng, Culver City, CA (US);
AZ Power Inc., Culver City, CA (US);
Abstract
A passivation method for a silicon carbide (SiC) surface may include steps of providing a silicon carbide surface, depositing a thin metal layer on the silicon carbide surface, forming a first passivation layer on the metal layer at low temperature, and generating a dielectric layer by a reaction between a gas/liquid ambient and the thin metal layer. In one embodiment, the thin metal layer is deposited on the silicon carbide surface by sputtering, e-beam evaporation, electroplating, etc. In another embodiment, the metal may include, but not limited to, aluminum, magnesium, etc. In a further embodiment, the passivation layer can be a low temperature oxide and/or nitride layer. In still a further embodiment, the dielectric layer can be aluminum oxide, titanium di-oxide etc. The passivation method for a silicon carbide (SiC) may further include a step of forming a second passivation layer on the first passivation layer.