The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Jan. 19, 2017
Ruigang LI, Fremont, CA (US);
Zheng Zuo, Culver City, CA (US);
Bochao Huang, Chino, CA (US);
Da Teng, Culver City, CA (US);
Ruigang Li, Fremont, CA (US);
Zheng Zuo, Culver City, CA (US);
Bochao Huang, Chino, CA (US);
Da Teng, Culver City, CA (US);
Other;
Abstract
A method for fabricating a silicon carbide power device may include steps of: forming a first n-type silicon carbide layer on top of a second n-type silicon carbide layer; depositing a first metal layer on the first silicon carbide layer; patterning the first metal layer; depositing and patterning a dielectric layer onto at least a portion of the pattered first metal layer; and depositing and patterning a second metal layer to form a Schottky barrier. In one embodiment, the first metal layer is a high work function metal layer, which may include Silver, Aluminum, Chromium, Nickel and Gold. In another embodiment, the second metal layer is called a 'Schottky metal' layer, which may include Platinum, Titanium and Nickel Silicide.