The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Nov. 01, 2018
NA Ren, Los Angeles, CA (US);
Zheng Zuo, Los Angeles, CA (US);
Ruigang LI, Los Angeles, CA (US);
AZ Power Inc., Culver City, CA (US);
Abstract
In one aspect, a method for manufacturing a Schottky diode with double P-type epitaxial layers may include steps of: providing a substrate; forming a first epitaxial layer on top of the substrate; forming a second epitaxial layer on top of the first epitaxial layer; depositing a third epitaxial layer on top of the second epitaxial layer; patterning the second and third epitaxial layers to form a plurality of trenches in the second and third epitaxial layers; depositing a first ohmic contact metal on a backside of the substrate; forming a second ohmic contact metal on top of the patterned third epitaxial layer; forming a Schottky contact metal at a bottom portion of each trench; and forming a pad electrode on top of the Schottky contact metal. In one embodiment, the second and third epitaxial layers can be made by Ptype SiC and Ptype SiC, respectively.