The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Apr. 09, 2010
Applicants:
Jianlin Liu, Riverside, CA (US);
Dengtao Zhao, Santa Clara, CA (US);
Yan Zhu, Santa Clara, CA (US);
Ruigang LI, Fremont, CA (US);
Bei LI, Fremont, CA (US);
Inventors:
Jianlin Liu, Riverside, CA (US);
Dengtao Zhao, Santa Clara, CA (US);
Yan Zhu, Santa Clara, CA (US);
Ruigang Li, Fremont, CA (US);
Bei Li, Fremont, CA (US);
Assignee:
The Regents of the University of California, Oakland, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
In one embodiment, a memory device includes a substrate, a tunneling oxide, a silicide nanocrystal floating gate, and a control oxide. The tunneling oxide is positioned upon a first surface of the substrate, the silicide nanocrystal floating gate is positioned upon the tunneling oxide, and the control oxide positioned upon the nanocrystal floating gate.