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For the Inventor, By the Inventor

Richardson, TX, United States of America

Richard Allen Bailey

This inventor holds 20 USPTO granted patents and 3 published patent applications, primarily in Ferroelectric Memory. Top assignees: Texas Instruments Corporation, Ramtron International Corporation, Nippon Steel Semiconductor Corporation. Active years: 1995-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Richard Allen Bailey. Retrieved from https://idiyas.com/inventor/richard-allen-bailey

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 20 

% Patents Active = 95.0

Average Co-Inventor Count = 2.0

ph-index = 8

Forward Citations = 294(Granted Patents)


Location History:

  • Woodland Park, CO (US) (1998 - 1999)
  • Ballston Spa, NY (US) (2003)
  • Colorado Springs, CO (US) (1995 - 2008)
  • Richardson, TX (US) (2017 - 2022)

Company Filing History:

goldMedal13 out of 29,901 
 
Texas Instruments Corporation
 patents
silverMedal6 out of 134 
 
Ramtron International Corporation
 patents
bronzeMedal1 out of 67 
 
Nippon Steel Semiconductor Corporation
 patents
4. 1 out of 834,570 
Other
 patents
where one patent can have more than one assignee

Years Active: 1995-2022

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Areas of Expertise:
Ferroelectric Capacitor
Random Number Generation
Data Retention Loss
Integrated Circuits
Fusible Link Cell
Process Monitoring
Hydrogen Barrier
Stuck Bits Screening
Non-Volatile Memory
Transistor Fabrication
Physical Unclonable Function
Low-Temperature Passivation
20 patents (USPTO):Explore Patents
1. 11495607 - Low-temperature passivation of ferroelectric integrated circuits for enhanced polarization performance (2022-11-08),
2. 10424361 - Physical unclonable function system and method (2019-09-24),
3. 10290362 - Screening for data retention loss in ferroelectric memories (2019-05-14),
4. 10153053 - Fusible link cell with dual bit storage (2018-12-11),
5. 10152257 - Random number generation in ferroelectric random access memory (FRAM) (2018-12-11),
6. 9851914 - Random number generation in ferroelectric random access memory (FRAM) (2017-12-26),
7. 9842662 - Screening for data retention loss in ferroelectric memories (2017-12-12),
8. 9824769 - Fusible link cell with dual bit storage (2017-11-21),
9. 9607717 - Reliability screening of ferroelectric memories in integrated circuits (2017-03-28),
10. 9552880 - Screening for later life stuck bits in ferroelectric memories (2017-01-24),
11. 7344939 - Ferroelectric capacitor with parallel resistance for ferroelectric memory (2008-03-18),
12. 7180141 - Ferroelectric capacitor with parallel resistance for ferroelectric memory (2007-02-20),
13. 7149137 - Process monitoring for ferroelectric memory devices with in-line retention test (2006-12-12),
14. 6613586 - HYDROGEN BARRIER ENCAPSULATION TECHNIQUES FOR THE CONTROL OF HYDROGEN INDUCED DEGRADATION OF FERROELECTRIC CAPACITORS IN CONJUNCTION WITH MULTILEVEL METAL PROCESSING FOR NON-VOLATILE INTEGRATED CIRCUIT MEMORY DEVICES (2003-09-02),
15. 6517022 - Cable storage device (2003-02-11),

Title: Exploring the Innovations of Richard Allen Bailey

Introduction

Richard Allen Bailey is a prominent inventor based in Richardson, TX, known for his significant contributions to the field of integrated circuit technology. Holding an impressive portfolio, he has been awarded 20 patents throughout his career, showcasing his commitment to innovation and technological advancement.

Latest Patents

Bailey's latest patents reflect cutting-edge methodologies in improving ferroelectric integrated circuits. One notable patent is focused on the "Low-temperature passivation of ferroelectric integrated circuits for enhanced polarization performance." This innovation involves curing a passivation layer applied to the surface of ferroelectric integrated circuits. By using a high-temperature treatment below the Curie temperature, the cured passivation layer enables enhanced polarization characteristics, ultimately improving the performance of incorporated ferroelectric structures.

Another key patent is the "Physical unclonable function system and method," which details a method for generating random numbers from electronic circuit memory. This innovative approach utilizes ferroelectric two transistor, two capacitor (2T-2C) memory cells to create a secure random number generation process, which has vast applications in security systems and data protection.

Career Highlights

Throughout his career, Bailey has made substantial contributions while working with leading technology firms, most notably Texas Instruments Corporation and Ramtron International Corporation. His research and development efforts have played a crucial role in advancing the capabilities of integrated circuits, particularly in the area of ferroelectric memory technology.

Collaborations

Collaboration has been a significant aspect of Bailey's career, with notable peers such as John Anthony Rodriguez and Carl Z Zhou. Their combined expertise has contributed to the successful development of innovative technologies, underlining the significance of teamwork in research and development.

Conclusion

Richard Allen Bailey continues to push the boundaries of innovation with his groundbreaking patents and developments in integrated circuit technology. His work not only enhances the performance of electronic devices but also sets the stage for future advancements in the field. As he continues to innovate, the impact of his contributions will undoubtedly be felt in the technology sector for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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