The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2008
Filed:
Dec. 07, 2006
Jarrod Randall Eliason, Colorado Springs, CO (US);
Glen R. Fox, Colorado Springs, CO (US);
Richard A. Bailey, Colorado Springs, CO (US);
Jarrod Randall Eliason, Colorado Springs, CO (US);
Glen R. Fox, Colorado Springs, CO (US);
Richard A. Bailey, Colorado Springs, CO (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
Ferroelectric memory cells () are presented, in which a cell resistor (R) is integrated into the cell capacitor (C) to inhibit charge accumulation or charge loss at the cell storage node (SN) when the cell () is not being accessed while avoiding significant disruption of memory cell access operations. Methods () are provided for fabricating ferroelectric memory cells () and ferroelectric capacitors (C), in which a parallel resistance (R) is integrated in the capacitor ferroelectric material () or in an encapsulation layer () formed over the patterned capacitor structure (C).