The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Oct. 21, 2014
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Richard Bailey, Richardson, TX (US);
John A. Rodriguez, Dallas, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/50 (2006.01); G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
G11C 29/50016 (2013.01); G11C 11/225 (2013.01);
Abstract
A data retention reliability screen of integrated circuits including ferroelectric random access memory (FRAM) arrays. A reference voltage level is determined for each integrated circuit being tested, corresponding to the read of a high polarization capacitance data state. A number of FRAM cells in the integrated circuit are programmed to that data state, and then read at an elevated temperature, with the number of failing cells compared against a pass/fail threshold to determine whether the integrated circuit is vulnerable to long-term data retention failure.