The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2006
Filed:
Dec. 30, 2004
John Anthony Rodriguez, Richardson, TX (US);
Richard Allen Bailey, Colorado Springs, CO (US);
John Anthony Rodriguez, Richardson, TX (US);
Richard Allen Bailey, Colorado Springs, CO (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention facilitates evaluation of ferroelectric memory devices. A ferroelectric memory device is fabricated that comprises memory cells comprising ferroelectric capacitors (). A short delay polarization value is obtained () by writing a data value, performing a short delay, and reading the data value. A long delay polarization value is obtained () by again writing the data value, performing a long delay, and again reading the data value. The short delay and long delay polarization values are compared () to obtain a data retention lifetime for the ferroelectric memory device. The obtained data retention lifetime is compared with acceptable values () and, if deemed unacceptable, avoids unnecessary performance of thermal bake data retention lifetime testing.