The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2017

Filed:

Feb. 09, 2016
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Carl Z. Zhou, Plano, TX (US);

John A. Rodriguez, Dallas, TX (US);

Richard A. Bailey, Richardson, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); G11C 14/00 (2006.01);
U.S. Cl.
CPC ...
G11C 14/0072 (2013.01); G11C 11/221 (2013.01); G11C 11/2273 (2013.01);
Abstract

A reliability screen of integrated circuits including ferroelectric random access memory (FRAM) arrays for stuck bits. The FRAM devices are subjected to a high temperature bake in wafer form. A 'shmoo' of the reference voltage is performed, at an elevated temperature, for each device to identify a first reference voltage at which a first cell in the device fails a read of its low polarization capacitance data state, and a second reference voltage at which a selected number of cells in the device fail the read. The slope of the line between the first and second reference voltages, in the cumulative fail bit count versus reference voltage plane, is compared with a slope limit to determine whether any stuck bits are present in the device.


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