Company Filing History:
Years Active: 2011-2020
Title: Innovations by Inventor Carl Z Zhou
Introduction
Carl Z Zhou is a notable inventor based in Plano, TX, who has made significant contributions to the field of ferroelectric memories. With a total of six patents to his name, Zhou's work focuses on enhancing the reliability and efficiency of integrated circuits.
Latest Patents
Zhou's latest patents include innovative methods for setting reference voltage for data sensing in ferroelectric memories. This patent describes a testing system that connects to an integrated circuit (IC) with ferroelectric memory (FRAM) cells. The system programs the FRAM cells to a first data state and iteratively reads them at various reference voltages to identify a limit where at least one cell fails to return to the first data state. This process involves incrementally changing the initial reference voltage until the reference voltage limit is identified, allowing the IC to set the reference at an optimal operating level.
Another significant patent by Zhou is focused on screening for data retention loss in ferroelectric memories. This patent outlines a reliability screen for integrated circuits that include FRAM arrays. It involves testing sampled groups of cells at different reference voltage levels after programming them to a high polarization capacitance data state. The results help derive a test reference voltage, which is then used to assess the vulnerability of the cells to long-term data retention failure.
Career Highlights
Throughout his career, Carl Z Zhou has worked with prominent companies, including Texas Instruments Corporation. His expertise in ferroelectric memory technology has positioned him as a key player in the development of advanced integrated circuits.
Collaborations
Zhou has collaborated with notable colleagues such as John Anthony Rodriguez and Richard Allen Bailey, contributing to various projects that enhance the functionality of ferroelectric memories.
Conclusion
Carl Z Zhou's innovative work in the field of ferroelectric memories has led to significant advancements in integrated circuit technology. His patents reflect a deep understanding of data retention and voltage management, making him a valuable contributor to the industry.
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