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For the Inventor, By the Inventor

San Jose, CA, United States of America

Peter I Porshnev

This inventor holds 30 USPTO granted patents and 11 published patent applications and 1 EPO patent, primarily in Plasma Processing Technology. Top assignee: Applied Materials, Inc.. Active years: 2004-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Peter I Porshnev. Retrieved from https://idiyas.com/inventor/peter-i-porshnev

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 30 

% Patents Active = 20.0

 

Average Co-Inventor Count = 3.9

ph-index = 5

Forward Citations = 770(Granted Patents)


Location History:

  • Santa Clara, CA (US) (2013)
  • San Jose, CA (US) (2004 - 2016)
  • Poway, CA (US) (2013 - 2022)

Company Filing History:

goldMedal30 out of 14,433 
 
Applied Materials, Inc.
 patents

Years Active: 2004-2022

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Areas of Expertise:
Inductive Plasma Source
Magnetic Media Patterning
Plasma Immersion Ion Implantation
Threshold Voltage Adjustment
Semiconductor Fabrication
Photoresist Removal
Doping Profile Modification
Process Chamber Cleaning
Etch-Deposition Process
Substrate Temperature Control
Fluorine Radicals Scavenging
Electronic Device Manufacturing
30 patents (USPTO):Explore Patents
1. 11450509 - Inductive plasma source with metallic shower head using b-field concentrator (2022-09-20),
2. 10529541 - Inductive plasma source with metallic shower head using B-field concentrator (2020-01-07),
3. 10233538 - Demagnetization of magnetic media by C doping for HDD patterned media application (2019-03-19),
4. 9646642 - Resist fortification for magnetic media patterning (2017-05-09),
5. 9478437 - Methods for repairing low-k dielectrics using carbon plasma immersion (2016-10-25),
6. 9376746 - Demagnetization of magnetic media by C doping for HDD patterned media application (2016-06-28),
7. 8900405 - Plasma immersion ion implantation reactor with extended cathode process ring (2014-12-02),
8. 8802522 - Methods to adjust threshold voltage in semiconductor devices (2014-08-12),
9. 8658242 - Resist fortification for magnetic media patterning (2014-02-25),
10. 8642128 - Enhanced scavenging of residual fluorine radicals using silicon coating on process chamber walls (2014-02-04),
11. 8586952 - Temperature control of a substrate during a plasma ion implantation process for patterned disc media applications (2013-11-19),
12. 8501605 - Methods and apparatus for conformal doping (2013-08-06),
13. 8492177 - Methods for quantitative measurement of a plasma immersion process (2013-07-23),
14. 8354035 - Method for removing implanted photo resist from hard disk drive substrates (2013-01-15),
15. 8288257 - Doping profile modification in P3I process (2012-10-16),

Title: Innovations by Peter I Porshnev in Plasma Processing Technology

Introduction

Peter I Porshnev, located in San Jose, CA, is a distinguished inventor with an impressive portfolio of 30 patents. His contributions to the field of plasma processing have significantly advanced the technology used in various applications.

Latest Patents

One of his latest patents is titled "Inductive Plasma Source with Metallic Shower Head Using B-Field Concentrator." This method and apparatus enhances plasma processing of substrates through a meticulously designed processing chamber. It includes a substrate support and a lid assembly that faces the substrate support. The innovative plasma source features a coil situated within a conductive plate, which may contain nested conductive rings. The coil is engineered to be coplanar with the conductive plate and insulated by an insulator fitting within a channel of the plate. Additionally, a field concentrator surrounds the coil, and a gas distributor thoroughly supplies gas to the chamber, further optimizing the plasma processing efficiency.

Career Highlights

Peter has dedicated his professional career to Applied Materials, Inc., where he has made a notable impact through his work on various patents. His expertise and creative thinking have established him as a leader in the field of plasma technology.

Collaborations

Throughout his career, Peter has collaborated with esteemed colleagues such as Majeed Foad and Matthew D Scotney-Castle. These partnerships reflect a dynamic team effort aimed at pushing the boundaries of innovation in plasma processing technology.

Conclusion

Peter I Porshnev's work exemplifies the spirit of innovation within the engineering and technology sectors. His 30 patents, including the latest advancements in inductive plasma sources, illustrate his commitment to improving substrate processing techniques. As he continues to collaborate with fellow innovators, his contributions will undoubtedly shape the future of this critical industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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